The influence of indium tin oxide deposition on the transport properties at InP junctions
Identifieur interne : 000232 ( Main/Exploration ); précédent : 000231; suivant : 000233The influence of indium tin oxide deposition on the transport properties at InP junctions
Auteurs : RBID : ISTEX:11664_1993_Article_BF02817692.pdfEnglish descriptors
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Abstract
The influence of the deposition of indium tin oxide (ITO) on the electrical properties at n- and p-InP junctions have been investigated by current-voltage-temperature and capacitance-voltage measurements. It was found that the formation of the ITO layer on n-type InP substrates causes the reduction of the barrier height and subsequently forms an ohmic contact. The ITO layer on p-type substrates increases the barrier height by 200–300 meV, and causes a defect-assisted tunneling at low forward bias. The results, therefore, can be explained by the introduction of process induced donor-like defects, with the formation of a thin n+-layer in the near-surface, decreasing the barrier height for n-substrates and increasing the barrier height for p-substrates. These results support the buried n+/p-junction model for ITO/p-InP solar cell structures.
DOI: 10.1007/BF02817692
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Thomas</name><affiliation wicri:level="1"><mods:affiliation>School of Electrical, Electronic and System Engineering, University of Wales College of Cardiff, Cardiff, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>School of Electrical, Electronic and System Engineering, University of Wales College of Cardiff, Cardiff</wicri:regionArea><wicri:noRegion>Cardiff</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1993_Article_BF02817692.pdf</idno><date when="1993">1993</date><idno type="doi">10.1007/BF02817692</idno><idno type="wicri:Area/Main/Corpus">000A73</idno><idno type="wicri:Area/Main/Curation">000A73</idno><idno type="wicri:Area/Main/Exploration">000232</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>InP</term><term>Indium tin oxide</term><term>Solar cell structures</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The influence of the deposition of indium tin oxide (ITO) on the electrical properties at n- and p-InP junctions have been investigated by current-voltage-temperature and capacitance-voltage measurements. It was found that the formation of the ITO layer on n-type InP substrates causes the reduction of the barrier height and subsequently forms an ohmic contact. The ITO layer on p-type substrates increases the barrier height by 200–300 meV, and causes a defect-assisted tunneling at low forward bias. The results, therefore, can be explained by the introduction of process induced donor-like defects, with the formation of a thin n+-layer in the near-surface, decreasing the barrier height for n-substrates and increasing the barrier height for p-substrates. These results support the buried n+/p-junction model for ITO/p-InP solar cell structures.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="bbff5d86bfea601c19dfb71d36b6708a23497ee6"><titleInfo lang="eng"><title>The influence of indium tin oxide deposition on the transport properties at InP junctions</title></titleInfo><name type="personal"><namePart type="given">J. K.</namePart><namePart type="family">Luo</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Electrical, Electronic and System Engineering, University of Wales College of Cardiff, Cardiff, UK</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Thomas</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Electrical, Electronic and System Engineering, University of Wales College of Cardiff, Cardiff, UK</affiliation></name><typeOfResource>text</typeOfResource><genre>Regular Issue Paper</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1993-08-08</dateCreated><dateValid encoding="w3cdtf">2008-01-18</dateValid><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The influence of the deposition of indium tin oxide (ITO) on the electrical properties at n- and p-InP junctions have been investigated by current-voltage-temperature and capacitance-voltage measurements. It was found that the formation of the ITO layer on n-type InP substrates causes the reduction of the barrier height and subsequently forms an ohmic contact. The ITO layer on p-type substrates increases the barrier height by 200–300 meV, and causes a defect-assisted tunneling at low forward bias. The results, therefore, can be explained by the introduction of process induced donor-like defects, with the formation of a thin n+-layer in the near-surface, decreasing the barrier height for n-substrates and increasing the barrier height for p-substrates. These results support the buried n+/p-junction model for ITO/p-InP solar cell structures.</abstract><subject lang="eng"><genre>Key words</genre><topic>InP</topic><topic>indium tin oxide</topic><topic>solar cell structures</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Journal of Elec Materi</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1993</partNumber><partNumber>Volume: 22</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1993-11-01</dateIssued><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Electronics and Microelectronics, Instrumentation</topic><topic>Solid State Physics and Spectroscopy</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 11</identifier><recordInfo><recordOrigin>The Minerals, Metals & Materials Society, 1993</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02817692</identifier><identifier type="matrixNumber">Art1</identifier><identifier type="local">BF02817692</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1311</start><end>1316</end></extent></part><recordInfo><recordOrigin>The Minerals, Metals & Materials Society, 1993</recordOrigin><recordIdentifier>11664_1993_Article_BF02817692.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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